5G and AI Integrated High Performance Mobile SoC Process-Design Co-Development and Production with 7nm EUV FinFET Technology

2020 IEEE Symposium on VLSI Technology Pub Date : 2020-06-01 DOI:10.1109/VLSITechnology18217.2020.9265074

Jie Deng, U. Roh, Jerry Bao, Youseok Suh, Jihong Choi, Ying Chen, Vicki Lin, Jason Cheng, Zhimin Song, M. Cai, L. Ge, Gary Chen, Leo Kim, Hao Wang, S. Song, Deepak Kumar Sharma, Xiao yong Wang, Byungmoo Song, Y. Y. Masuoka, Kwon Lee, Sungwon Kim, Jinkyu Lee, Hyejun Jin, Venu Boynapalli, Rajagopal Narayanan, P. Pénzes, G. Nallapati, C. Chidambaram

{"title":"5G and AI Integrated High Performance Mobile SoC Process-Design Co-Development and Production with 7nm EUV FinFET Technology","authors":"Jie Deng, U. Roh, Jerry Bao, Youseok Suh, Jihong Choi, Ying Chen, Vicki Lin, Jason Cheng, Zhimin Song, M. Cai, L. Ge, Gary Chen, Leo Kim, Hao Wang, S. Song, Deepak Kumar Sharma, Xiao yong Wang, Byungmoo Song, Y. Y. Masuoka, Kwon Lee, Sungwon Kim, Jinkyu Lee, Hyejun Jin, Venu Boynapalli, Rajagopal Narayanan, P. Pénzes, G. Nallapati, C. Chidambaram","doi":"10.1109/VLSITechnology18217.2020.9265074","DOIUrl":null,"url":null,"abstract":"We report on Qualcomm® Snapdragon™ 765 mobile Platform and world's first integrated 5G platform supporting both mmWave and sub-6 using industry-leading 7nm EUV FinFET technology. Snapdragon 765 unites 5G and AI to power select premium-tier experiences on a global scale. Snapdragon 765 exhibits 20% improvement in performance and 35% lower power consumption over its predecessor Snapdragon 730 (8nm FinFET) thanks to device performance boost with new technology integration feature (MDB), power-perf efficient design architecture enabled by dual poly pitch process, and low voltage logic/memory operation through process-design co-development. Further process-design co-optimization reduces CPU Vmin by 80mV, enabling premium-tier performance experience with integrated 5G and AI mobile SOC platform.","PeriodicalId":6850,"journal":{"name":"2020 IEEE Symposium on VLSI Technology","volume":"1 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSITechnology18217.2020.9265074","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 5

Abstract

We report on Qualcomm® Snapdragon™ 765 mobile Platform and world's first integrated 5G platform supporting both mmWave and sub-6 using industry-leading 7nm EUV FinFET technology. Snapdragon 765 unites 5G and AI to power select premium-tier experiences on a global scale. Snapdragon 765 exhibits 20% improvement in performance and 35% lower power consumption over its predecessor Snapdragon 730 (8nm FinFET) thanks to device performance boost with new technology integration feature (MDB), power-perf efficient design architecture enabled by dual poly pitch process, and low voltage logic/memory operation through process-design co-development. Further process-design co-optimization reduces CPU Vmin by 80mV, enabling premium-tier performance experience with integrated 5G and AI mobile SOC platform.

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5G和AI集成高性能移动SoC工艺设计与7nm EUV FinFET技术共同开发和生产

高通骁龙765移动平台和全球首个集成5G平台，支持毫米波和sub-6，采用业界领先的7nm EUV FinFET技术。骁龙765将5G和人工智能结合在一起，在全球范围内为精选的高端体验提供支持。Snapdragon 765的性能比其前身Snapdragon 730 (8nm FinFET)提高了20%，功耗降低了35%，这得益于新技术集成功能(MDB)的器件性能提升，双多节工艺实现的节能设计架构，以及通过工艺设计共同开发的低压逻辑/内存操作。进一步的工艺设计协同优化可将CPU Vmin降低80mV，从而在集成5G和AI移动SOC平台上实现顶级性能体验。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2020 IEEE Symposium on VLSI Technology

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