A Generic CMOS Compatible Piezoelectric Multilayer Actuator Approach Based on Permanent Ferroelectric Polarization Inversion In Al1-X ScxN

Abstract

Based on the discovery of ferroelectric polarization inversion in piezoelectric Al1.xScxN thin films, this paper presents a double layer actuator stack configuration which demonstrates that the inherent advantages of piezoelectric AlN and Al1-xScxN, like CMOS compatibility, polarization stability and linearity can be combined with the advantages of classical ferroelectric multilayer systems to achieve superior strain output for piezoelectric MEMS actuators with minimal effort compared to alternative multilayer approaches.