1.6 w/mm, 26% PAE AlGaN/GaN HEMT operation at 29GHz

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) Pub Date : 2001-12-02 DOI:10.1109/IEDM.2001.979670

R. Sandhu, M. Wojtowicz, M. Barsky, R. Tsai, I. Smorchkova, C. Namba, P. Liu, R. Dia, M. Truong, D. Ko, J. Yang, H. Wang, M.A. Khan

引用次数: 13

Abstract

In this paper, we report the first GaN HEMT power device to operate at 29 GHz. The 0.2 μm T-gate AlGaN/GaN HEMT with a 120 μm total gate periphery exhibited a pulsed output power of 1.6 W/mm with a gain of 6.7 dB and an associated power aided efficiency of 26% at 29 GHz. The epitaxial layers were grown by MOCVD on SiC.

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1.6 w/mm, 26% PAE AlGaN/GaN HEMT工作在29GHz

在本文中，我们报道了第一个工作在29 GHz的GaN HEMT功率器件。在29 GHz时，总栅极周长为120 μm的0.2 μm t栅极AlGaN/GaN HEMT的脉冲输出功率为1.6 W/mm，增益为6.7 dB，功率辅助效率为26%。采用MOCVD法在SiC表面生长外延层。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)

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