M. Bareiss, B. Weiler, D. Kalblein, U. Zschieschang, H. Klauk, G. Scarpa, B. Fabel, P. Lugli, W. Porod
{"title":"Nano-transfer printing of functioning MIM tunnel diodes","authors":"M. Bareiss, B. Weiler, D. Kalblein, U. Zschieschang, H. Klauk, G. Scarpa, B. Fabel, P. Lugli, W. Porod","doi":"10.1109/SNW.2012.6243287","DOIUrl":null,"url":null,"abstract":"Nano diodes show great potential for applications in detectors, communications and energy harvesting. In this work, we focus on nano transfer printing (nTP) to fabricate nm-scale diodes over extensive areas. Using a temperature-enhanced process, several millions of diodes were transfer-printed in one single step. We show the reliable transfer of functioning MIM diodes, which were electrically characterized by conductive Atomic Force Microscopy (c-AFM) measurements. Quantum-mechanical tunneling was determined to be the main conduction mechanism across the metal-oxide-metal junction.","PeriodicalId":6402,"journal":{"name":"2012 IEEE Silicon Nanoelectronics Workshop (SNW)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2012-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE Silicon Nanoelectronics Workshop (SNW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SNW.2012.6243287","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
Nano diodes show great potential for applications in detectors, communications and energy harvesting. In this work, we focus on nano transfer printing (nTP) to fabricate nm-scale diodes over extensive areas. Using a temperature-enhanced process, several millions of diodes were transfer-printed in one single step. We show the reliable transfer of functioning MIM diodes, which were electrically characterized by conductive Atomic Force Microscopy (c-AFM) measurements. Quantum-mechanical tunneling was determined to be the main conduction mechanism across the metal-oxide-metal junction.