Nano-transfer printing of functioning MIM tunnel diodes

M. Bareiss, B. Weiler, D. Kalblein, U. Zschieschang, H. Klauk, G. Scarpa, B. Fabel, P. Lugli, W. Porod
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引用次数: 4

Abstract

Nano diodes show great potential for applications in detectors, communications and energy harvesting. In this work, we focus on nano transfer printing (nTP) to fabricate nm-scale diodes over extensive areas. Using a temperature-enhanced process, several millions of diodes were transfer-printed in one single step. We show the reliable transfer of functioning MIM diodes, which were electrically characterized by conductive Atomic Force Microscopy (c-AFM) measurements. Quantum-mechanical tunneling was determined to be the main conduction mechanism across the metal-oxide-metal junction.
功能MIM隧道二极管的纳米转移印刷
纳米二极管在探测器、通信和能量收集方面显示出巨大的应用潜力。在这项工作中,我们将重点放在纳米转移印刷(nTP)上,以在广泛的领域制造纳米级二极管。使用温度增强工艺,数百万个二极管在一个步骤中被转移打印。通过导电原子力显微镜(c-AFM)测量,我们展示了功能MIM二极管的可靠转移。量子力学隧穿被确定为金属-氧化物-金属结的主要传导机制。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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