Compatibility of Environmentally Friendly Insulating Gases CF3I and c-C4F8 with Cu Contacts

IF 1.5 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER
Can Ding, Zhenjiang Gao, Xing Hu, Zhao Yuan
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引用次数: 3

Abstract

The gas-solid compatibility between environmentally friendly insulating gas and copper contacts is worth studying. In this paper, based on density functional theory, the adsorption calculation of CF3I, c-C4F8, five typical decomposition gases, and Cu (1 1 1) surface was carried out. The adsorption energies, transferred charges, charge densities, and densities of states were calculated for different adsorption configurations. Research indicates that there is no obvious charge transfer between the I atom and the Cu atom in the four adsorption sites of Cu (1 1 1) for the CF3I molecule. There is a charge transfer between the F atoms and the Cu top surface. The electrons lost by Cu are transferred to F atoms. In the configurations of different adsorption positions on CF3I and Cu (1 1 1) planes, the top and bridge adsorption energies are −0.835 eV and −0.993 eV, respectively, which are chemical adsorption. Therefore, CF3I is most likely to form adsorption at the top or bridge site of the Cu (1 1 1) surface. The adsorption energy of c-C4F8 gas on Cu (1 1 1) surface is similar to that of CF3I at fcc and hcp sites. The absolute values are all less than 0.8 eV, and the van der Waals force is the main force. The adsorption energies of C2F4 and C3F6 in the five decomposed gases are −1.315 eV and −1.204 eV, respectively. The charge transfer is −0.32 eV and −0.45 eV, respectively. Their values are larger than those of the other gases studied, which belong to chemical adsorption. The smaller values of the remaining three gases belong to physical adsorption. All molecular structures and Cu (1 1 1) planes were not significantly deformed. From a microscopic point of view, the gas can better exist on the copper surface.
环境友好型绝缘气体CF3I和c-C4F8与Cu触点的兼容性
环保绝缘气体与铜触点的气固相容性值得研究。本文基于密度泛函理论,对CF3I、c-C4F8、5种典型分解气体以及Cu(11 11)表面进行了吸附计算。计算了不同吸附构型的吸附能、转移电荷、电荷密度和态密度。研究表明,在Cu(1 1 1)对CF3I分子的四个吸附位点上,I原子与Cu原子之间没有明显的电荷转移。在F原子和Cu顶部表面之间存在电荷转移。Cu失去的电子被转移到F原子上。在CF3I和Cu(1 1 1)平面上不同吸附位置的构型中,顶部和桥接吸附能分别为- 0.835 eV和- 0.993 eV,为化学吸附。因此,CF3I最有可能在Cu(11 11 1)表面的顶部或桥位形成吸附。c-C4F8气体在Cu(11 11)表面的吸附能与CF3I在fcc和hcp位点的吸附能相似。其绝对值均小于0.8 eV,且以范德华力为主。C2F4和C3F6在5种分解气体中的吸附能分别为- 1.315 eV和- 1.204 eV。电荷转移量分别为- 0.32 eV和- 0.45 eV。它们的值比所研究的其他气体的值大,属于化学吸附。其余三种气体较小的值属于物理吸附。所有分子结构和Cu(11 11)面均无明显变形。从微观的角度来看,气体可以更好地存在于铜表面。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Advances in Condensed Matter Physics
Advances in Condensed Matter Physics PHYSICS, CONDENSED MATTER-
CiteScore
2.30
自引率
0.00%
发文量
33
审稿时长
6-12 weeks
期刊介绍: Advances in Condensed Matter Physics publishes articles on the experimental and theoretical study of the physics of materials in solid, liquid, amorphous, and exotic states. Papers consider the quantum, classical, and statistical mechanics of materials; their structure, dynamics, and phase transitions; and their magnetic, electronic, thermal, and optical properties. Submission of original research, and focused review articles, is welcomed from researchers from across the entire condensed matter physics community.
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