{"title":"A CMOS magnetic latch with extremely high resolution","authors":"Z.Q. Li, X.W. Sun","doi":"10.1109/IEDM.2002.1175984","DOIUrl":null,"url":null,"abstract":"A novel CMOS magnetic latch with extremely high magnetic resolution based on a single split-drain magnetic field-effect transistor is reported. The minimum detectable magnetic flux density is less than 4 /spl mu/T. The resolution for magnetic pattern recognition is less than 2 mT. The breakthrough has been achieved by importing a positive feedback.","PeriodicalId":74909,"journal":{"name":"Technical digest. International Electron Devices Meeting","volume":"21 1","pages":"909-912"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Technical digest. International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2002.1175984","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
A novel CMOS magnetic latch with extremely high magnetic resolution based on a single split-drain magnetic field-effect transistor is reported. The minimum detectable magnetic flux density is less than 4 /spl mu/T. The resolution for magnetic pattern recognition is less than 2 mT. The breakthrough has been achieved by importing a positive feedback.