Electrical properties of multilayer graphene interconnects prepared by chemical vapor deposition

Abstract

We fabricate multilayer graphene interconnects with 100-nm-class line widths. Multilayer graphene is grown on a Ni catalyst layer using remote plasma-enhanced chemical vapor deposition (CVD) at a low temperature of 600°C and transferred onto a SiO2/Si substrate after exfoliation from the Ni layer. The sheet resistance of the CVD graphene interconnects is as low as 500 Ω sq. The temperature dependence of resistance reveals that the CVD graphene exhibits half-metallic transport properties.