Glass Substrate Interposer for TSV-integrated Surface Electrode Ion Trap

Abstract

To facilitate large-scale implementation of quantum information processing (QIP) based on ion trap system, the design of through silicon via (TSV) integrated ion trap with glass interposer is proposed. Glass interposer is employed for TSV landing and to provide another degree of freedom for electrical signal delivery by the redistribution layer (RDL) on it. Benefited from the insulating property of glass, the parasitic capacitance between electrodes of glass interposer (0.4 pF) is significantly reduced, as compared to its silicon counterparts (650 pF). From the modeling, it is also shown that the reflection loss can be reduced by more than 30 dB when the silicon interposer is replaced by glass interposer. High power efficiency and low heat dissipation can thus be guaranteed during ion trapping operation.