The Comparison of Experimental and Theoretical Study on Graphene Peeling off from SiO2

Qi Zhang, Dongliang Zhang, X. Pang, Yulong Zhao
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引用次数: 1

Abstract

By surface scanning Raman spectrum, the peeling off state of graphene from SiO2 surface was observed. It is found because the defects of graphene produced during the transferring process, graphene are easily exfoliated. A straight upward velocity was forced on the topmost graphene, and the exfoliation process of graphene was observed when weak contacted with SiO2 substrate. In multilayer graphene system, three two critical velocities to exfoliate graphene from SiO2 surface were found, and three kinds of distinct exfoliation processes took place determined by critical upward velocities. The critical velocity to exfoliate all graphene layers was even 10 times smaller than that of topmost layer. The maximum exfoliation force to exfoliate the topmost layer graphene was 3200 times larger than that of all graphene layers. And it required 139.79 mJ/m2 to get monolayer graphene from multilayers, while peel off all layers without effort.
石墨烯从SiO2上剥离的实验与理论比较研究
通过表面扫描拉曼光谱,观察了石墨烯从SiO2表面的剥离状态。研究发现,由于石墨烯在转移过程中产生的缺陷,石墨烯容易脱落。当石墨烯与SiO2衬底弱接触时,观察到石墨烯的剥落过程。在多层石墨烯体系中,石墨烯从SiO2表面剥离的临界速度有3种,且由临界向上速度决定了三种不同的剥离过程。所有石墨烯层剥落的临界速度甚至比最顶层的速度小10倍。最顶层石墨烯的最大剥离力是所有石墨烯层的3200倍。从多层石墨烯中得到单层石墨烯需要139.79 mJ/m2,而无需费力地剥离所有层。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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