{"title":"SPICE Modeling and Verification of Wafer-Scale MoS2Transistors","authors":"Xi Wang, Shunli Ma, Baowen Zhong, Junyan Ren","doi":"10.1109/ICSICT49897.2020.9278321","DOIUrl":null,"url":null,"abstract":"This paper presents a SPICE model for the current-voltage (I-V) characteristics of Mos2 field-effect transistors based on the level-62 MOSFET SPICE model template. We simulated both the output characteristics and transfer characteristics of single-layer Mos2 FETs based on the model we built. Model parameters are extracted according to different working region. The root-mean-square error of the I-V characteristics of Mos2 FETs in this paper is extremely small and the simulation speed is fast. In addition, we built an inverter circuit to verify the accuracy of our model, and the simulation results of its voltage transfer characteristics(VTC) match well with the experimental results.","PeriodicalId":6727,"journal":{"name":"2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)","volume":"11 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2020-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT49897.2020.9278321","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper presents a SPICE model for the current-voltage (I-V) characteristics of Mos2 field-effect transistors based on the level-62 MOSFET SPICE model template. We simulated both the output characteristics and transfer characteristics of single-layer Mos2 FETs based on the model we built. Model parameters are extracted according to different working region. The root-mean-square error of the I-V characteristics of Mos2 FETs in this paper is extremely small and the simulation speed is fast. In addition, we built an inverter circuit to verify the accuracy of our model, and the simulation results of its voltage transfer characteristics(VTC) match well with the experimental results.