SPICE Modeling and Verification of Wafer-Scale MoS2Transistors

Xi Wang, Shunli Ma, Baowen Zhong, Junyan Ren
{"title":"SPICE Modeling and Verification of Wafer-Scale MoS2Transistors","authors":"Xi Wang, Shunli Ma, Baowen Zhong, Junyan Ren","doi":"10.1109/ICSICT49897.2020.9278321","DOIUrl":null,"url":null,"abstract":"This paper presents a SPICE model for the current-voltage (I-V) characteristics of Mos2 field-effect transistors based on the level-62 MOSFET SPICE model template. We simulated both the output characteristics and transfer characteristics of single-layer Mos2 FETs based on the model we built. Model parameters are extracted according to different working region. The root-mean-square error of the I-V characteristics of Mos2 FETs in this paper is extremely small and the simulation speed is fast. In addition, we built an inverter circuit to verify the accuracy of our model, and the simulation results of its voltage transfer characteristics(VTC) match well with the experimental results.","PeriodicalId":6727,"journal":{"name":"2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)","volume":"11 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2020-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT49897.2020.9278321","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

This paper presents a SPICE model for the current-voltage (I-V) characteristics of Mos2 field-effect transistors based on the level-62 MOSFET SPICE model template. We simulated both the output characteristics and transfer characteristics of single-layer Mos2 FETs based on the model we built. Model parameters are extracted according to different working region. The root-mean-square error of the I-V characteristics of Mos2 FETs in this paper is extremely small and the simulation speed is fast. In addition, we built an inverter circuit to verify the accuracy of our model, and the simulation results of its voltage transfer characteristics(VTC) match well with the experimental results.
晶圆级mos2晶体管的SPICE建模与验证
本文基于62级MOSFET SPICE模型模板,建立了Mos2场效应晶体管电流-电压(I-V)特性的SPICE模型。基于所建立的模型,模拟了单层Mos2场效应管的输出特性和转移特性。根据不同的工作区域提取模型参数。本文的Mos2场效应管的I-V特性的均方根误差极小,仿真速度快。此外,我们搭建了一个逆变电路来验证模型的准确性,其电压传递特性(VTC)的仿真结果与实验结果吻合良好。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信