General route of nanowire field effect transistor

Abstract

An increasing number of technologies require large-scale integration of separately fabricated nano-objects into spatially organized, functional systems. Here we introduce an approach for dielectrophoresis and reserse transfer printing method. By doing these method we can easily get a nanowire bottom gate transistor with high performance. Firstly, nanowire bridge was formed simply by dielectrophoresis and then by reverse transferring of this bridge on the gate dielectric layer, a nanowire field effect transistor was fabricated. The on/off ratio, threshold voltage, field effect hole mobility, hole concentration and threshold swing of the transistor were measured by ∼6.6×10⁶, −7.2V, 9.9cm²/V·s and ∼1.453×10¹⁶/cm⁻³, and 0.504V/decade.