3D integration of heterogeneous MEMS structures by stamping transfer

H. Onoe, E. Iwase, K. Matsumoto, I. Shimoyama
{"title":"3D integration of heterogeneous MEMS structures by stamping transfer","authors":"H. Onoe, E. Iwase, K. Matsumoto, I. Shimoyama","doi":"10.1109/MEMSYS.2007.4433045","DOIUrl":null,"url":null,"abstract":"We propose an integration method of heterogeneous micro-electro-mechanical-system (MEMS) structures by liftoff and stamping transfer using a poly-(dimethylsiloxane) (PDMS) sheet. Silicon structures fabricated on multiple wafers were lifted off by PDMS sheets, and integrated onto a single wafer by the stamping transfer with high yield (>90%) and high accuracy (position error <500 nm). A two-dimensional (2D) integration and three-dimensional (3D) assembly of pyramid-like/inverted pyramid-like structures were demonstrated by our method. These demonstrations prove that our method enables us to integrate process-incompatible heterogeneous MEMS structures onto a single wafer.","PeriodicalId":6388,"journal":{"name":"2007 IEEE 20th International Conference on Micro Electro Mechanical Systems (MEMS)","volume":"13 1","pages":"175-178"},"PeriodicalIF":0.0000,"publicationDate":"2007-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE 20th International Conference on Micro Electro Mechanical Systems (MEMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MEMSYS.2007.4433045","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8

Abstract

We propose an integration method of heterogeneous micro-electro-mechanical-system (MEMS) structures by liftoff and stamping transfer using a poly-(dimethylsiloxane) (PDMS) sheet. Silicon structures fabricated on multiple wafers were lifted off by PDMS sheets, and integrated onto a single wafer by the stamping transfer with high yield (>90%) and high accuracy (position error <500 nm). A two-dimensional (2D) integration and three-dimensional (3D) assembly of pyramid-like/inverted pyramid-like structures were demonstrated by our method. These demonstrations prove that our method enables us to integrate process-incompatible heterogeneous MEMS structures onto a single wafer.
异质MEMS结构的冲压转移三维集成
我们提出了一种利用聚二甲基硅氧烷(PDMS)薄片进行提升和冲压转移的非均质微机电系统(MEMS)结构集成方法。在多片硅片上制备的硅结构被PDMS片提升,并通过冲压转移集成到单片硅片上,具有高良率(>90%)和高精度(位置误差<500 nm)。利用该方法实现了类金字塔/倒金字塔结构的二维积分和三维装配。这些演示证明,我们的方法使我们能够将工艺不相容的异构MEMS结构集成到单个晶圆上。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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