Deep Ultraviolet Edge Emitting Laser Diode Using Novel Boron Gallium Nitride over Sapphire Substrate: Simulation Study

Abstract

Exploiting the advanced LASTIP-Crosslight simulator, theoretical analysis for a novel edge emitting laser diode (EELD) composed of trinary Boron Gallium Nitride BxGa1-xN is performed in this work to enhance the P-type conductivity. The simulation results obtained with a prototypical proposal expect lasing at a target UVC wavelength of 270 nm. Furthermore, the minimum direct-resistance can be obtained under the N-electrode area width of 0.5 µm or the P-electrode area width of 3 µm. This result is attributed to the linear and nonlinear relationships between the direct-resistance and the width sizes of N-electrode and P-electrode.