Application of Face-Centered Central Composite Design for the Optimization of Chemical Etching Process of QFN-mr Package Using Alkaline-Based Chemical Solution

Rohn Kenneth L. Serapio, Ernesto T. Antilano, Alvin S. Soreda
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Abstract

Quad-Flat No Lead Multi-row (QFN-mr) is a common type of integrated circuit (IC) package that is leadless and plastically encapsulated in build. Before being cut into units through singulation process, QFN-mr packages are in Cu leadframe strip form and typically subjected to chemical wet etching treatment to remove Cu metal in areas between lead and pad and eventually, prevent metal shorting issue during soldering of individual units. The objective of this work is to establish optimum parameter combination for the chemical etching of QFN-mr package using face-centered central composite design as experimental design and alkaline-based solution as chemical etching agent. Experimental runs were carried out in a conveyorized, horizontal wet etching line. From the results, it was found out that the amount of material etched increases as conveyor speed and etching nozzle spray pressure are decreased and increased, respectively. Optimum setting was predicted to be at 55 cm/min conveyor speed and 1.67 bar etching spray pressure. This produced the target lead and pad dimensional response, as proved by the results of the actual confirmatory test performed.
面心中心复合设计在QFN-mr封装碱性化学溶液化学蚀刻工艺优化中的应用
四平无引线多排(QFN-mr)是一种常见的集成电路(IC)封装,它是无引线和塑料封装在构建。在通过模拟工艺切割成单元之前,QFN-mr封装采用Cu引线框架带形式,通常进行化学湿法蚀刻处理,以去除铅和焊盘之间区域的Cu金属,最终防止在焊接单个单元时出现金属短路问题。以面心中心复合设计为实验设计,以碱性溶液为化学蚀刻剂,建立QFN-mr封装化学蚀刻的最佳参数组合。实验运行在一个传送带,水平湿蚀刻线。结果表明,随着输送速度的减小和腐蚀喷嘴喷射压力的增大,腐蚀材料的量增大。预测最佳设置为输送速度为55 cm/min,蚀刻喷涂压力为1.67 bar。这产生了目标导联和衬垫尺寸响应,正如实际验证测试结果所证明的那样。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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