Evolution, challenge, and outlook of TSV, 3D IC integration and 3d silicon integration

J. Lau
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引用次数: 155

Abstract

3D integration consists of 3D IC packaging, 3D IC integration, and 3D Si integration. They are different and in general the TSV (through-silicon via) separates 3D IC packaging from 3D IC/Si integrations since the latter two use TSV but 3D IC packaging does not. TSV (with a new concept that every chip or interposer could have two surfaces with circuits) is the heart of 3D IC/Si integrations and is the focus of this investigation. The origin of 3D integration is presented. Also, the evolution, challenges, and outlook of 3D IC/Si integrations are discussed as well as their road maps are presented. Finally, a few generic, low-cost, and thermal-enhanced 3D IC integration system-in-packages (SiPs) with various passive TSV interposers are proposed.
TSV、3D集成电路和3D硅集成的发展、挑战和展望
3D集成包括3D IC封装、3D IC集成和3D Si集成。它们是不同的,一般来说,TSV(通硅通孔)将3D IC封装与3D IC/Si集成分开,因为后两者使用TSV,但3D IC封装没有。TSV(每个芯片或中间层都可以有两个带电路的表面的新概念)是3D IC/Si集成的核心,也是本研究的重点。介绍了三维集成的起源。此外,还讨论了3D IC/Si集成的发展、挑战和前景,并给出了它们的发展路线图。最后,提出了几种通用的、低成本的、热增强的3D集成电路系统级封装(sip),采用各种无源TSV中间体。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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