Role of screening, heating, and dielectrics on high-field transport in graphene

A. Serov, Z. Ong, V. Dorgan, E. Pop
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引用次数: 0

Abstract

Graphene is an interesting material for electronic applications due to its high intrinsic mobility at low-field. However, high-field transport in graphene is less well understood, with the simple assumption often made that it is limited by substrate optical phonon (SO) scattering. Here we model high-field transport in graphene on several dielectric substrates including SO and graphene phonons, proper charge screening, impurity scattering, and self-heating effects. Our model is carefully calibrated against existing experimental data for graphene on SiO2 [1] at several ambient temperatures and different carrier densities. We then use it to investigate transport in graphene on other dielectrics where experiments do not exist yet.
筛选、加热和电介质在石墨烯高场输运中的作用
石墨烯由于其在低场下的高固有迁移率而成为一种有趣的电子应用材料。然而,人们对石墨烯中的高场输运知之甚少,通常认为它受到衬底光学声子(SO)散射的限制。在这里,我们模拟了石墨烯在几种介质衬底上的高场输运,包括SO和石墨烯声子,适当的电荷筛选,杂质散射和自热效应。我们的模型是根据现有的实验数据在不同的环境温度和不同的载流子密度下对二氧化硅上的石墨烯[1]进行仔细校准的。然后,我们用它来研究石墨烯在其他电介质上的输运,这些实验还不存在。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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