Application of an analytical model based on transistor concepts for the characterization of potential-induced degradation in crystalline silicon photovoltaics

Abstract

The analytical transient model for potential-induced degradation (PID) based on transistor aging, originally presented by the authors, is further developed here in an attempt to replicate the PID conditions more accurately. The improved model predicts the leakage current which is regarded as a measure of the PID intensity and is used to validate the model's ability to capture the PID effects. The results obtained show good agreement with the reports on PID phenomena of standard crystalline silicon photovoltaics. This confirms the hypothesis that the PID mechanism is similar to transistor aging concepts and provides additional justification for the adoption of transistor aging models as a basis for PID modeling.