Thermal characterization of GaAs MESFETs by means of pulsed measurements

Abstract

Thermal effects in GaAs MESFETs have been characterized by means of pulsed I-V measurements performed at several controlled temperatures. The temperature dependence of the main device parameters, extracted from the measured data, was implemented in a simplified, SPICE-like model of the device, coupling electrical and thermal effects. The model provides good agreement with the measured data over wide bias and temperature ranges.<>