An All-Wet, Low Cost RDL Fabrication Process with Electroless Plated Seed/Barrier Layers

Ziru Cai, Yingtao Ding, Zhaohu Wu, Ziyue Zhang, Yuquan Su, Zhiming Chen
{"title":"An All-Wet, Low Cost RDL Fabrication Process with Electroless Plated Seed/Barrier Layers","authors":"Ziru Cai, Yingtao Ding, Zhaohu Wu, Ziyue Zhang, Yuquan Su, Zhiming Chen","doi":"10.1109/IITC51362.2021.9537437","DOIUrl":null,"url":null,"abstract":"2.5D/3D IC packaging and fan-out wafer-level packaging (FOWLP) have attracted much attention both from the academics and industries. In these technologies, the manufacturing of redistribution/rerouting layer (RDL) plays an important role. In this paper, an all-wet, low cost RDL fabrication process is designed and experimentally demonstrated, employing photosensitive polyimide (PSPI) as the dielectric layer and electroless plating for the seed/barrier layers. Using the spin coating technique, the PSPI dielectric layer with uniform thickness is formed on the surface of the substrate, followed by the patterning of mirco-vias and the thermal curing. With the help of O2 plasma cleaning for 10 mins, the residual PSPI at the corners of patterned micro-vias is removed completely and the profiles of the patterned micro-vias are further improved. In addition, the rough surface morphology of PSPI layer after the O2 plasma cleaning is beneficial to enhance the adhesion property of the electroless plated seed/barrier layers, which is verified by the standard cross cut test. Finally, with semi-additive process (SAP), fine-profile RDL with micro-vias is successfully fabricated and presented.","PeriodicalId":6823,"journal":{"name":"2021 IEEE International Interconnect Technology Conference (IITC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2021-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE International Interconnect Technology Conference (IITC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC51362.2021.9537437","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

2.5D/3D IC packaging and fan-out wafer-level packaging (FOWLP) have attracted much attention both from the academics and industries. In these technologies, the manufacturing of redistribution/rerouting layer (RDL) plays an important role. In this paper, an all-wet, low cost RDL fabrication process is designed and experimentally demonstrated, employing photosensitive polyimide (PSPI) as the dielectric layer and electroless plating for the seed/barrier layers. Using the spin coating technique, the PSPI dielectric layer with uniform thickness is formed on the surface of the substrate, followed by the patterning of mirco-vias and the thermal curing. With the help of O2 plasma cleaning for 10 mins, the residual PSPI at the corners of patterned micro-vias is removed completely and the profiles of the patterned micro-vias are further improved. In addition, the rough surface morphology of PSPI layer after the O2 plasma cleaning is beneficial to enhance the adhesion property of the electroless plated seed/barrier layers, which is verified by the standard cross cut test. Finally, with semi-additive process (SAP), fine-profile RDL with micro-vias is successfully fabricated and presented.
一种全湿、低成本的化学镀种/阻挡层RDL制造工艺
2.5D/3D集成电路封装和扇出晶圆级封装(FOWLP)已经引起了学术界和工业界的广泛关注。在这些技术中,重分发/重路由层(RDL)的制造起着重要的作用。本文设计了一种全湿、低成本的RDL制备工艺,采用光敏聚酰亚胺(PSPI)作为介质层,化学镀为种子/阻挡层。采用自旋镀膜技术,在衬底表面形成均匀厚度的PSPI介电层,然后进行微通孔的图图化和热固化。O2等离子清洗10 min后,图案微孔边角处残留的PSPI被完全去除,图案微孔的轮廓得到进一步改善。此外,O2等离子清洗后的PSPI层表面形貌粗糙,有利于提高化学镀种/阻隔层的附着性能,这一点通过标准横切试验得到了验证。最后,利用半增材工艺(SAP)成功地制备了具有微通孔的细轮廓RDL。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信