Prototyping and characterization of radiation hardened SiC MOS structures

Abstract

This study shall be considered as preparatory work supporting the planned development of discrete European radiation-hardened SiC power-MOSFETs for space applications. It's based on prototyping and manufacturing elementary structures that have been submitted to DC, AC, stability characterizations and radiation tests, in order to study the contributions of any basic element that composes the MOSFET structure to radiation sensitivity in a dedicated way.