Stress evolution during self-annealing of methanesulfonate bath electroplating cu for TSV

Abstract

Through silicon via (TSV) is a high performance technique to create 3D packages and 3Dintegrated circuits, compared to alternatives such as package-on-package, because the density of via is substantially higher. The correlation of stress and texture evolution during self-annealing of copper electrodeposited from TSV filling methanesulfonate bath has been studied by Surface Profiler, X-ray diffraction (XRD) and Scanning electron microscope (SEM). Methanesulfonate bath is first used in correlative research. We show that addition of different organic additives can strong affect the stress and texture of electrodeposited cupper films. The XRD patterns of copper films reveal the presence of (1 1 1), (2 0 0), (2 2 0), and (3 1 1) peaks, intensity of which is connect with the concentration of the electroplated bath and the organic additives in the plating bath.