An improved OM-CVD growth model for III–V semiconductors—Metalorganic halides for the CVD growth

Abstract

Metalorganic halides are discussed for OM-CVD crystal growth. A growth model for the III–V semiconductors is proposed which employs metal-halogen-metal bridging to eliminate the metal- carbon-metal bridging in the group III organometallics considered to be a major factor for the carbon contamination of the OM-CVD crystals and formation of metal carbide parasitic phase. The metal-halogen-metal bridge theory underlying the model is put to test by spanning the organo and halide functions substituted on group III element for elimination of carbon contamination and improvements of the growth rates and electrophysical properties of the III–V alloys.