Spreaded-vertical-capacitor cell (SVC) for beyond 64 Mbit DRAMs

Abstract

An advanced three-dimensionally (3-D) stacked capacitor cell, SVC, was developed. The SVC shows good electrical characteristics, and it realized a capacitance of 43 fF with a cell area of 1.8 mu m/sup 2/. The uniform formation of the capacitor-dielectric-film (oxide-nitride-oxide film: ONO) on the experimental storage electrode indicates the uniform deposition of the ONO film on all kinds of 3-D storage electrodes including that of the SVC. The SVC is the most promising cell structure for beyond 64 Mbit DRAMs (dynamic RAMs).<>