Cu pillar bump development for 7nm Chip package interaction (CPI) technology

Fu Lei, S BhagavatMilind, C. Selvanayagam, Ken Leong, Barber Ivor
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引用次数: 1

Abstract

Power, performance, and area gains are important metrics driving the CMOS technology from older nodes to newer ones. Over past several decades, a steady downscaling of feature sizes of CMOS technology has been a leading force enabling continual improvement in circuit speeds and cost per functionality. Increase in functionality drives larger number of I/Os, and the scaling driven small IP block sizes force these larger number of I/Os to be accommodated by reduction of I/O pitches. The result is an unrelenting pressure to reduce bump pitches from one generation of CMOS to another. In contrast to 14nm/16nm nodes which used 150um bump pitch coming out of a die, for 7nm node the industry is targeting 130um bump pitch for high performance devices. With this pitch reduction, conventional SnAg solder bumps face limitations in terms of bridging. Cu pillar bumps are the best candidate for smaller bump pitches. However, for large die sizes prevalent in High Performance Computing, the Cu pillar bumps will induce higher stress on the silicon resulting in higher risks of ELK cracking. If copper pillar bumps are not properly developed, then there is a risk of marginal reliability in terms of chip package interaction. The situation becomes even more dire in large die sizes, where CTE mismatch between silicon and laminate substrate magnifies the stress. The present paper discusses successful development of Cu pillar bumps for 7nm technology. The development program included a 2-step development path. In the first step, extensive thermo-mechanical modeling was done to find optimal design of copper pillar bump for robustness of interactions with 7nm BEOL ELK layers. In the second step, a 460 mm2 7nm Silicon test Vehicle was fabricated and its assembly process was optimized to characterize the copper pillar bumps and prove their extended reliability on 7nm silicon. As a result of this development, copper pillar technology has been qualified on AMD products. Today, copper pillar is a fully integral part of AMD's ever-growing 7nm product offering in High Performance Computing.
7nm晶片封装交互(CPI)技术的铜柱凸点开发
功耗、性能和面积增益是推动CMOS技术从旧节点转向新节点的重要指标。在过去的几十年里,CMOS技术特征尺寸的稳步缩小一直是推动电路速度和每功能成本不断提高的主要力量。功能的增加驱动了更多的I/O,而扩展驱动的小IP块大小迫使这些更大数量的I/O被减少的I/O间距所容纳。其结果是不断减小从一代CMOS到另一代CMOS的凹凸间距。14nm/16nm节点采用150um凸距,而7nm节点的目标是130um凸距,用于高性能器件。随着间距的减小,传统的SnAg焊点在桥接方面面临限制。铜柱凸点是较小凸点的最佳候选。然而,对于高性能计算中普遍存在的大尺寸模具,铜柱凸起将在硅上引起更高的应力,从而导致更高的ELK开裂风险。如果铜柱凸起没有得到适当的开发,那么就芯片封装相互作用而言,存在边际可靠性的风险。这种情况在大尺寸的模具中变得更加可怕,硅和层压衬底之间的CTE不匹配放大了应力。本文讨论了7纳米铜柱凸点的成功开发。该发展计划包括两步发展路径。在第一步中,进行了广泛的热力学建模,以找到铜柱凸点的最佳设计,以确保与7nm BEOL ELK层相互作用的鲁棒性。第二步,制作了460 mm2 7nm硅测试车,并对其组装工艺进行了优化,以表征铜柱凸起,并证明其在7nm硅上的扩展可靠性。由于这一发展,铜柱技术在AMD产品上已经合格。今天,铜柱是AMD高性能计算领域不断增长的7nm产品中不可或缺的一部分。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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