InP thin films with single-crystalline-like properties on flexible metal substrates for photovoltaic application

P. Dutta, M. Rathi, Ying Gao, Yao Yao, D. Khatiwada, M. T. Desessarts, A. Khadimallah, N. Zheng, P. Ahrenkiel, V. Selvamanickam
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引用次数: 1

Abstract

We demonstrate heteroepitaxial growth of single-crystalline-like InP thin films by metal organic chemical vapor deposition (MOCVD) on low-cost flexible metal foils. The epitaxy was enabled by a multilayer oxide buffer made using ion beam assisted deposition (IBAD). The InP films were biaxially textured with sharp in-plane texture and exhibited strong (002) preferential out-of-plane orientation. Strong room-temperature photoluminescence was also observed with band gap of ~ 1.27 eV. Electron mobility of > 700 cm2/V-s at a carrier concentration of 5 × 1017 cm-3 was obtained. High quality single crystalline-like InP films on low-cost metal substrates may potentially be used in the fabrication of inexpensive flexible InP solar cells.
光伏应用于柔性金属基板上具有单晶性质的铟磷薄膜
在低成本的柔性金属箔上,采用金属有机化学气相沉积(MOCVD)技术制备了单晶样InP薄膜。外延是由离子束辅助沉积(IBAD)制成的多层氧化物缓冲液实现的。InP薄膜呈双轴织构,具有明显的面内织构,并表现出较强的(002)面外取向。在~ 1.27 eV的带隙下,还观察到强的室温光致发光现象。在载流子浓度为5 × 1017 cm-3时,得到了bbb700 cm2/V-s的电子迁移率。低成本金属衬底上的高质量单晶样InP薄膜可能用于制造廉价的柔性InP太阳能电池。
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