Unconventional transistor sizing for reducing power alleviates threshold voltage variations

A. Beg, Valeriu Beiu, W. Ibrahim
{"title":"Unconventional transistor sizing for reducing power alleviates threshold voltage variations","authors":"A. Beg, Valeriu Beiu, W. Ibrahim","doi":"10.1109/SMICND.2012.6400739","DOIUrl":null,"url":null,"abstract":"Digital circuits can be synthesized with only NANDs or NORs, while delay and power can be quite different. Scaling transistors increases their sensitivity to variations and in particular to threshold voltage variations (σVTH). Sizing transistors trades delay versus power, while unconventional sizing (e.g., L >; Lmin, W/L <; 1, fine-grained increments, multifinger FETs) was proposed recently for reducing power and also σVTH. Using Monte Carlo simulations we perform an analysis of how sensitive the output voltages of NAND-2 and NOR-2 are to increasing L over Lmin, and examine how such sizing affects delay, power, and power-delay-product of these two gates.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"3 1","pages":"429-432"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"CAS 2012 (International Semiconductor Conference)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2012.6400739","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9

Abstract

Digital circuits can be synthesized with only NANDs or NORs, while delay and power can be quite different. Scaling transistors increases their sensitivity to variations and in particular to threshold voltage variations (σVTH). Sizing transistors trades delay versus power, while unconventional sizing (e.g., L >; Lmin, W/L <; 1, fine-grained increments, multifinger FETs) was proposed recently for reducing power and also σVTH. Using Monte Carlo simulations we perform an analysis of how sensitive the output voltages of NAND-2 and NOR-2 are to increasing L over Lmin, and examine how such sizing affects delay, power, and power-delay-product of these two gates.
非常规晶体管尺寸减小功率减轻阈值电压变化
数字电路可以只使用nand或nor来合成,而延迟和功率可能有很大的不同。缩放晶体管增加了它们对变化的灵敏度,特别是对阈值电压变化的灵敏度(σVTH)。晶体管的尺寸权衡了延迟和功率,而非常规的尺寸(例如L >;Lmin, W/L <;(1,细粒度增量,多指场效应管)最近被提出用于降低功率和σVTH。使用蒙特卡罗模拟,我们分析了NAND-2和NOR-2的输出电压对增加L / Lmin有多敏感,并检查了这种尺寸如何影响这两个门的延迟、功率和功率延迟积。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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