Improved Contacts to Synthetic Monolayer MoS2 – A Statistical Study

Aravindh Kumar, A. Tang, H. Wong, K. Saraswat
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引用次数: 2

Abstract

Two-dimensional (2D) semiconductors are promising candidates for scaled transistors because they are immune to mobility degradation at the monolayer limit. However, sub-10 nm scaling of 2D semiconductors, such as MoS2, is limited by the contact resistance. In this work, we show for the first time a statistical study of Au contacts to chemical vapor deposited monolayer MoS2 using transmission line model (TLM) structures, before and after dielectric encapsulation. We report contact resistance values as low as 330 ohm-um, which is the lowest value reported to date. We further study the effect of Al2O3 encapsulation on variability in contact resistance and other device metrics. Finally, we note some deviations in the TLM model for short-channel devices in the back-gated configuration and discuss possible modifications to improve the model accuracy.
改进接触合成单层二硫化钼的统计研究
二维(2D)半导体是有前途的候选缩放晶体管,因为他们是免疫迁移率下降在单层的限制。然而,二维半导体(如MoS2)在10纳米以下的缩放受到接触电阻的限制。在这项工作中,我们首次展示了使用传输线模型(TLM)结构,在介质封装之前和之后,Au与化学气相沉积单层MoS2的接触的统计研究。我们报告的接触电阻值低至330欧姆,这是迄今为止报道的最低值。我们进一步研究了Al2O3封装对接触电阻变异性和其他器件指标的影响。最后,我们注意到在背控配置中短通道器件的TLM模型中的一些偏差,并讨论了可能的修改以提高模型精度。
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