Ba1−xSrxTiO3 thin-film-based X-band selective coplanar waveguide microwave resonator using SiO2 as buffer layer

IF 0.7 4区 材料科学 Q4 METALLURGY & METALLURGICAL ENGINEERING
R. Miglani, Reema Gupta, Anjali Sharma, M. Tomar, A. Chowdhuri
{"title":"Ba1−xSrxTiO3 thin-film-based X-band selective coplanar waveguide microwave resonator using SiO2 as buffer layer","authors":"R. Miglani, Reema Gupta, Anjali Sharma, M. Tomar, A. Chowdhuri","doi":"10.1557/s43578-023-01118-2","DOIUrl":null,"url":null,"abstract":"Open-circuited coplanar waveguide (OC-CPW)-based filters have many applications in microwave and transmission line circuits. CPW-based resonant structure with ferroelectric thin film provides advantages including small size, light weight, tunable frequency, etc. The purpose of the current work is to fabricate the novel design of X-band (8.2–12.4 GHz) microwave resonator on thin film of Barium Strontium Titanate (Ba0.5Sr0.5TiO3 or BST) on bare silicon (Si) substrate with and without silicon dioxide (SiO2) as buffer layer. The pattern of microwave resonator has been successfully designed using conventional UV-photolithography technique on Pulsed Laser Deposition (PLD)-grown thin films of BST. The resonating frequencies with minimum return loss of devices fabricated on BST/Si and BST/SiO2/Si substrate recorded as 7.8 GHz and 10.02 GHz, respectively. The resonating frequency of microwave resonator on BST/SiO2/Si substrate lies in X-band region. OC-CPW microwave resonator on (a) BST/Si and (b) BST/SiO2/Si OC-CPW microwave resonator on (a) BST/Si and (b) BST/SiO2/Si","PeriodicalId":14079,"journal":{"name":"International Journal of Materials Research","volume":"8 1","pages":"4009 - 4021"},"PeriodicalIF":0.7000,"publicationDate":"2023-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Materials Research","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1557/s43578-023-01118-2","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"METALLURGY & METALLURGICAL ENGINEERING","Score":null,"Total":0}
引用次数: 0

Abstract

Open-circuited coplanar waveguide (OC-CPW)-based filters have many applications in microwave and transmission line circuits. CPW-based resonant structure with ferroelectric thin film provides advantages including small size, light weight, tunable frequency, etc. The purpose of the current work is to fabricate the novel design of X-band (8.2–12.4 GHz) microwave resonator on thin film of Barium Strontium Titanate (Ba0.5Sr0.5TiO3 or BST) on bare silicon (Si) substrate with and without silicon dioxide (SiO2) as buffer layer. The pattern of microwave resonator has been successfully designed using conventional UV-photolithography technique on Pulsed Laser Deposition (PLD)-grown thin films of BST. The resonating frequencies with minimum return loss of devices fabricated on BST/Si and BST/SiO2/Si substrate recorded as 7.8 GHz and 10.02 GHz, respectively. The resonating frequency of microwave resonator on BST/SiO2/Si substrate lies in X-band region. OC-CPW microwave resonator on (a) BST/Si and (b) BST/SiO2/Si OC-CPW microwave resonator on (a) BST/Si and (b) BST/SiO2/Si
以SiO2为缓冲层的Ba1−xSrxTiO3薄膜基x波段选择性共面波导微波谐振器
开路共面波导(OC-CPW)滤波器在微波和传输线电路中有着广泛的应用。基于cpw的铁电薄膜谐振结构具有体积小、重量轻、频率可调等优点。本工作的目的是在裸硅(Si)衬底上,以二氧化硅(SiO2)作为缓冲层和不含缓冲层,在钛酸钡锶(Ba0.5Sr0.5TiO3或BST)薄膜上制作新设计的x波段(8.2-12.4 GHz)微波谐振器。利用传统的紫外光刻技术,在脉冲激光沉积(PLD)生长的BST薄膜上成功地设计了微波谐振腔图案。在BST/Si和BST/SiO2/Si衬底上制备的器件回波损耗最小的谐振频率分别为7.8 GHz和10.02 GHz。微波谐振器在BST/SiO2/Si衬底上的谐振频率位于x波段。(a) BST/Si和(b) BST/SiO2/Si的OC-CPW微波谐振器(a) BST/Si和(b) BST/SiO2/Si的OC-CPW微波谐振器
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
CiteScore
1.30
自引率
12.50%
发文量
119
审稿时长
6.4 months
期刊介绍: The International Journal of Materials Research (IJMR) publishes original high quality experimental and theoretical papers and reviews on basic and applied research in the field of materials science and engineering, with focus on synthesis, processing, constitution, and properties of all classes of materials. Particular emphasis is placed on microstructural design, phase relations, computational thermodynamics, and kinetics at the nano to macro scale. Contributions may also focus on progress in advanced characterization techniques. All articles are subject to thorough, independent peer review.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信