L. Grenouillet, T. Francois, J. Coignus, S. Kerdilès, N. Vaxelaire, C. Carabasse, F. Mehmood, S. Chevalliez, C. Pellissier, F. Triozon, F. Mazen, G. Rodriguez, T. Magis, V. Havel, S. Slesazeck, F. Gaillard, U. Schroeder, T. Mikolajick, E. Nowak
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引用次数: 18
Abstract
10nm Si-implanted HfO2 is demonstrated to be ferroelectric for the first time when integrated in a Back- End-Of - Line (BEOL) 130nm CMOS. Scaled $.28\mu \mathrm{m}^{2}$. capacitors demonstrate excellent endurance (109 cycles measured at 4 V, extrapolated to be 1012 at 3V), with tight coercive field distributions at wafer scale and excellent data retention at 85°C. To extend the ferroelectric BEOL compatibility of 10nm or thinner HfO2- based films, but also to understand their crystallization dynamics, nanosecond laser anneal is demonstrated to be very appealing, even for undoped HfO2.
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