Lead-Free BiFeO3 Thin Film: Ferroelectric and Pyroelectric Properties

M. Botea, C. Chirila, G. Boni, I. Pasuk, L. Trupina, I. Pintilie, L. Hrib, Becherescu Nicu, L. Pintilie
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引用次数: 2

Abstract

The ferroelectric and pyroelectric properties of bismuth ferrite (BFO) epitaxial thin film have been investigated. The ferroelectric epitaxial thin layer has been deposited on strontium titanate (STO) (001) substrate by pulsed laser deposition, in a capacitor geometry using as top and bottom electrode a conductive oxide of strontium ruthenate (SRO). The structural characterizations performed by X-ray diffraction and atomic force microscopy demonstrate the epitaxial character of the ferroelectric thin film. The macroscopic ferroelectric characterization of BFO revealed a rectangular shape of a polarization-voltage loop with a remnant polarization of 30 μC/c m2 and a coercive electric field of 633 KV/cm at room temperature. Due to low leakage current, the BFO capacitor structure could be totally pooled despite large coercive fields. A strong variation of polarization is obtained in 80–400 K range which determines a large pyroelectric coefficient of about 10−4 C/m2 K deduced both by an indirect and also by a direct method.
无铅BiFeO3薄膜:铁电和热释电性质
研究了铋铁氧体(BFO)外延薄膜的铁电和热释电性能。采用脉冲激光沉积方法在钛酸锶(STO)(001)衬底上制备了铁电外延薄层,并采用导电的钌酸锶(SRO)氧化物作为上下电极,形成电容几何形状。用x射线衍射和原子力显微镜对铁电薄膜进行了结构表征,证明了其外延特性。宏观铁电表征表明,BFO在室温下呈矩形极化电压环,残余极化量为30 μC/c m2,矫顽力电场为633 KV/cm。由于泄漏电流小,BFO电容器结构可以在大的矫顽力场下完全池化。在80 - 400k范围内,极化有很强的变化,这决定了间接法和直接法推导出的大热释电系数约为10−4 C/m2 K。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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