Characterization of microbolometer based on nanopolycrystal VO2 thin films

Shaowei He, Xingzhi Wang, J. Dai, Ying-Chieh Huang, J. Lai, X. Yi
{"title":"Characterization of microbolometer based on nanopolycrystal VO2 thin films","authors":"Shaowei He, Xingzhi Wang, J. Dai, Ying-Chieh Huang, J. Lai, X. Yi","doi":"10.1109/NANO.2007.4601414","DOIUrl":null,"url":null,"abstract":"A new nanopolycrystalline vanadium dioxide (VO2) thin film has been prepared. The thin film is fabricated by reaction-ion sputtering and post-annealing process .The average grain size is 8-10 nm, the phase transition temperature drops down to 35degC, and the temperature coefficiency of resistance (TCR) is -6~7%/K in semiconductor zone. However, the average grain size of conventional microstructure VO2 is 1~2 mum and TCR is about -2%/K. 64times2 linear uncooled microbolometers with pixel size 50 mumtimes50 mum have been fabricated based on the nanopolycrystalline V02 thin films and conventional microstructure VO2 thin films. The characteristics of the micrbolometer arrays are investigated in the spectral region of 8- 12 mum. The test indicates that the performance of the sensor based on nanopolycrystalline VO2 is nearly 3 times higher than that based on conventional microstructure VO2 thin film.","PeriodicalId":6415,"journal":{"name":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","volume":"71 1","pages":"1269-1272"},"PeriodicalIF":0.0000,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 7th IEEE Conference on Nanotechnology (IEEE NANO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NANO.2007.4601414","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

A new nanopolycrystalline vanadium dioxide (VO2) thin film has been prepared. The thin film is fabricated by reaction-ion sputtering and post-annealing process .The average grain size is 8-10 nm, the phase transition temperature drops down to 35degC, and the temperature coefficiency of resistance (TCR) is -6~7%/K in semiconductor zone. However, the average grain size of conventional microstructure VO2 is 1~2 mum and TCR is about -2%/K. 64times2 linear uncooled microbolometers with pixel size 50 mumtimes50 mum have been fabricated based on the nanopolycrystalline V02 thin films and conventional microstructure VO2 thin films. The characteristics of the micrbolometer arrays are investigated in the spectral region of 8- 12 mum. The test indicates that the performance of the sensor based on nanopolycrystalline VO2 is nearly 3 times higher than that based on conventional microstructure VO2 thin film.
基于纳米多晶VO2薄膜的微测热计的表征
制备了一种新型的纳米多晶二氧化钒(VO2)薄膜。采用反应溅射和后退火工艺制备了薄膜,薄膜的平均晶粒尺寸为8 ~ 10 nm,相变温度降至35℃,半导体区电阻温度系数(TCR)为-6~7%/K。常规显微组织的平均晶粒尺寸为1~2 μ m, TCR约为-2%/K。基于纳米多晶V02薄膜和传统微结构的VO2薄膜,制备了像素尺寸为50 mumtimes50 mum的64times2线性非冷却微辐射热计。研究了微热计阵列在8 ~ 12 μ m光谱范围内的特性。测试表明,基于纳米多晶VO2的传感器性能比基于传统微结构VO2薄膜的传感器性能提高了近3倍。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信