Characterization of FeS2 Thin Film Prepared by Spray Pyrolysis Method for Optoelectronic Applications

M. Ibrahim, M. Hassan, K. Hassoon
{"title":"Characterization of FeS2 Thin Film Prepared by Spray Pyrolysis Method for Optoelectronic Applications","authors":"M. Ibrahim, M. Hassan, K. Hassoon","doi":"10.53293/jasn.2022.3961.1115","DOIUrl":null,"url":null,"abstract":"In this work, the physical properties of iron sulfide (FeS 2 ) thin films deposited by the chemical spray-pyrolysis (CSP) technique were studied. The thin films are deposited on glass substrates at 200 o C, using FeCl 3 salt with thiourea (NH 2 ) 2 CS as precursors. Structural analysis of X-Ray diffraction manifested that the thin films contain two phases: Marcasite and Pyrite in planes (110), (111) at angles 2θ =26.3°, 2θ =28.3° respectively. Optical properties analysis showed that the prepared iron sulfide thin-films were highly absorbing in the UV-Visible range and the absorption coefficient was in the range of 1.6x10 5 cm-1 with a relatively low resistivity of about 0.49 (Ω.cm). The calculated activation energy (Ea) was 0.024 eV and the bandgap value was 2.45 eV. Moreover, the FeS2 thin films were also deposited on (CdO) to fabricate a heterojunction photocell. In conclusion, there is the feasibility of preparing low-cost and highly absorbing iron sulfide (FeS 2 ) thin films for optoelectronic applications with acceptable homogeneity using the spray-pyrolysis technique.","PeriodicalId":15241,"journal":{"name":"Journal of Applied Sciences and Nanotechnology","volume":"14 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2022-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Applied Sciences and Nanotechnology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.53293/jasn.2022.3961.1115","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

In this work, the physical properties of iron sulfide (FeS 2 ) thin films deposited by the chemical spray-pyrolysis (CSP) technique were studied. The thin films are deposited on glass substrates at 200 o C, using FeCl 3 salt with thiourea (NH 2 ) 2 CS as precursors. Structural analysis of X-Ray diffraction manifested that the thin films contain two phases: Marcasite and Pyrite in planes (110), (111) at angles 2θ =26.3°, 2θ =28.3° respectively. Optical properties analysis showed that the prepared iron sulfide thin-films were highly absorbing in the UV-Visible range and the absorption coefficient was in the range of 1.6x10 5 cm-1 with a relatively low resistivity of about 0.49 (Ω.cm). The calculated activation energy (Ea) was 0.024 eV and the bandgap value was 2.45 eV. Moreover, the FeS2 thin films were also deposited on (CdO) to fabricate a heterojunction photocell. In conclusion, there is the feasibility of preparing low-cost and highly absorbing iron sulfide (FeS 2 ) thin films for optoelectronic applications with acceptable homogeneity using the spray-pyrolysis technique.
喷雾热解法制备光电子用FeS2薄膜的表征
研究了化学喷雾热解(CSP)法制备的硫化铁(FeS 2)薄膜的物理性质。以fecl3盐和硫脲(nh2) 2 CS为前驱体,在200℃下在玻璃衬底上沉积薄膜。x射线衍射结构分析表明,薄膜在(110)面和(111)面(2θ =26.3°,2θ =28.3°)上含有黄铁矿和黄铁矿两相。光学性质分析表明,制备的硫化铁薄膜在紫外可见范围内具有良好的吸收性能,吸收系数在1.6x10 5 cm-1范围内,电阻率较低,约为0.49 (Ω.cm)。计算得到的活化能Ea为0.024 eV,带隙值为2.45 eV。此外,还在(CdO)上沉积了FeS2薄膜,制备了异质结光电池。综上所述,利用喷雾热解技术制备低成本、高吸收率且均匀性良好的光电子应用硫化铁(FeS 2)薄膜是可行的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信