Mobility and scattering mechanisms in buried InGaSb quantum well channels integrated with in-situ MBE grown gate oxide

Abstract

InGaSb material family with its higher hole transport properties are potential candidates for group III-V CMOS circuits. Understanding of the dominant scattering mechanisms is crucial for the development of future high speed, low power device applications. We present Hall mobility data of p-type InGaSb quantum well (QW) channels and derive the dominant scattering mechanisms related to the interface and trapped charges that degrade mobility in these structures.