3D-MiM (MUST-in-MUST) Technology for Advanced System Integration

A. Su, T. Ku, C. Tsai, K. Yee, Douglas C. H. Yu
{"title":"3D-MiM (MUST-in-MUST) Technology for Advanced System Integration","authors":"A. Su, T. Ku, C. Tsai, K. Yee, Douglas C. H. Yu","doi":"10.1109/ECTC.2019.00008","DOIUrl":null,"url":null,"abstract":"An advanced 3D Multi-stack (MUST) system integration technology, 3D MUST-in-MUST (3D-MiM) fan out package, has been developed as next generation wafer-level fan-out package technology. 3D-MiM technology utilizes a more simplified architecture which eliminates BGAs between packages for system-level performance, power and form-factor (PPA) purpose. This technology also makes use of a modularized approach for both design and integration flow to improve design flexibility and integration efficiency. Known-good pre-stacked memory cube and/or logic-memory cubes are fabricated by leveraging the established integrated fan-out technology platform (InFO) in tools, materials, design rules, and processes to shorten development cycle time and achieve cost effectiveness. Two 3D-MiM fan-out examples are presented in this paper. The first 3D-MiM package integrates a SoC with 16 memory chips in a 15x15 mm2 footprint with 0.5 mm package height (final BGA included) for mobile application. The other 3D-MiM package integrates 8 SoCs with 32 memory chips in a 43x28 mm2 footprint to mimic a system integration of multiple logic cores and multiple memory chips for HPC applications.","PeriodicalId":6726,"journal":{"name":"2019 IEEE 69th Electronic Components and Technology Conference (ECTC)","volume":"69 1","pages":"1-6"},"PeriodicalIF":0.0000,"publicationDate":"2019-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 69th Electronic Components and Technology Conference (ECTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECTC.2019.00008","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7

Abstract

An advanced 3D Multi-stack (MUST) system integration technology, 3D MUST-in-MUST (3D-MiM) fan out package, has been developed as next generation wafer-level fan-out package technology. 3D-MiM technology utilizes a more simplified architecture which eliminates BGAs between packages for system-level performance, power and form-factor (PPA) purpose. This technology also makes use of a modularized approach for both design and integration flow to improve design flexibility and integration efficiency. Known-good pre-stacked memory cube and/or logic-memory cubes are fabricated by leveraging the established integrated fan-out technology platform (InFO) in tools, materials, design rules, and processes to shorten development cycle time and achieve cost effectiveness. Two 3D-MiM fan-out examples are presented in this paper. The first 3D-MiM package integrates a SoC with 16 memory chips in a 15x15 mm2 footprint with 0.5 mm package height (final BGA included) for mobile application. The other 3D-MiM package integrates 8 SoCs with 32 memory chips in a 43x28 mm2 footprint to mimic a system integration of multiple logic cores and multiple memory chips for HPC applications.
用于先进系统集成的3D-MiM (MUST-in-MUST)技术
作为先进的3D多堆叠(MUST)系统集成技术,3D MUST-in-MUST (3D- mim)扇出封装已被开发为下一代晶圆级扇出封装技术。3D-MiM技术采用更简化的架构,消除了封装之间的bga,以实现系统级性能、功耗和外形因素(PPA)的目的。该技术还对设计和集成流程采用模块化方法,以提高设计灵活性和集成效率。通过在工具、材料、设计规则和流程中利用已建立的集成扇出技术平台(InFO)来制造已知的预堆叠内存立方体和/或逻辑内存立方体,以缩短开发周期时间并实现成本效益。本文给出了两个3D-MiM扇出的实例。第一个3D-MiM封装集成了一个SoC和16个内存芯片,占地面积为15x15mm2,封装高度为0.5 mm(包括最终BGA),适用于移动应用。另一款3D-MiM封装集成了8个soc和32个存储芯片,占地面积为43x28mm2,模拟了HPC应用的多个逻辑核心和多个存储芯片的系统集成。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信