Low voltage field emission from PbZr0.2Ti0.8O3-coated silicon nanotips

2013 IEEE 26th International Conference on Micro Electro Mechanical Systems (MEMS 2013) : Taipei, Taiwan, 20-24 January 2013. IEEE International Conference on Micro Electro Mechanical Systems (26th : 2013 : Taipei, Taiwan) Pub Date : 2013-03-07 DOI:10.1109/MEMSYS.2013.6474272

P. C. Fletcher, R. Mangalam, L. Martin, W. King

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Abstract

We report field emission from nanometer-sharp tips of polarized PbZr0.2Ti0.8O3 (PZT) and silicon. The ferroelectric PZT emitters are a high-density array of single-crystal silicon tips that are coated with a 30 nm thick film of crystalline PZT in a batch fabrication process. The PZT emitter tips begin to emit electrons at fields as low as 2 V/μm and reach threshold emission at fields as low as 3.9 V/μm. This is considerably lower than the threshold field of 7.2 V/μm for uncoated silicon emitter tips. This improvement is about one order of magnitude improvement over previous publications for silicon tips. Using a Fowler-Nordheim analysis, we calculate the effective work function of the PZT film to be 1.00 eV and the field amplification factor to be 1525.

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pbzr0.2 ti0.8 o3包覆硅纳米针尖的低压场发射

我们报道了极化PbZr0.2Ti0.8O3 (PZT)和硅的纳米尖尖场发射。铁电PZT发射器是一个高密度的单晶硅尖端阵列，在批量制造工艺中涂有30nm厚的PZT晶体薄膜。PZT发射极尖端在低至2 V/μm的场域中开始发射电子，在低至3.9 V/μm的场域中达到阈值发射。这大大低于未涂覆硅发射极尖端的7.2 V/μm阈值场。这一改进比以前发表的硅尖端改进了一个数量级。利用Fowler-Nordheim分析，我们计算出PZT薄膜的有效功函数为1.00 eV，场放大系数为1525。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2013 IEEE 26th International Conference on Micro Electro Mechanical Systems (MEMS 2013) : Taipei, Taiwan, 20-24 January 2013. IEEE International Conference on Micro Electro Mechanical Systems (26th : 2013 : Taipei, Taiwan)

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