Mechanisms of ambient dependent mobility degradation in the graphene MOSFETs on SiO2 substrate

Abstract

Two different mechanisms affecting the device instability and mobility degradation at graphene MOSFET on SiO2 substrate and their time constant, 40μsec and ~ 370μsec, have been identified. Oxygen/H2O reaction at the surface of graphene was identified as a major source of device hysteresis causing mobility degradation and device instability.