Numerical simulations of high heat dissipation technology in LSI 3-D packaging using carbon nanotube through silicon via (CNT-TSV) and thermal interface material (CNT-TIM)

Teppei Kawanabe, A. Kawabata, T. Murakami, M. Nihei, Y. Awano
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引用次数: 3

Abstract

We report numerical simulations of heat dissipation properties of nano-carbon through silicon via (TSV), thermal interface material (TIM), and chip package towards a high heat dissipation LSI 3-D packaging. By using vertically aligned multi-walled CNTs (MWNTs) as both TSV and TIM materials and graphite as chip package, a boundary temperature just under a heat source decreased 40.8K in total, comparing to that using conventional materials. This result suggests superior heat dissipation properties of nano-carbon 3-D packaging.
碳纳米管通硅孔(CNT-TSV)和热界面材料(CNT-TIM)在LSI三维封装中高散热技术的数值模拟
我们报告了纳米碳通过硅孔(TSV)、热界面材料(TIM)和芯片封装的散热性能的数值模拟,以实现高散热的LSI 3d封装。采用垂直排列的多壁碳纳米管(MWNTs)作为TSV和TIM材料,石墨作为芯片封装,热源下的边界温度比传统材料降低了40.8K。这一结果表明纳米碳三维封装具有优越的散热性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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