Temperature-Dependence of Deposition Rate and Current Efficiency in Platinum Electrodeposition at a Fixed Average Current Density

M. Saitou, S. Teruya, S. Hossain
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引用次数: 4

Abstract

We have investigated the formation of a platinum thin film from a simple solution of dihydrogen hexachloro- platinate in a low temperature range of 283 to 295 K by a pulse current technique. Despite the low temperature, the platinum thin film observed with a confocal laser scanning microscope does not comprise particle aggregates but dense layer with a small surface roughness that tends to saturate at an initial growth stage. The deposition rate and current efficiency at a fixed average current density are evidently dependent on temperature. The analysis of the mol weight of platinum deposit based on two electrochemical reactions proposed in platinum electrodeposition elucidates the tempera- ture dependence characterized by a thermal activation process.
固定平均电流密度下铂电沉积速率和电流效率的温度依赖性
用脉冲电流技术研究了在283 ~ 295k的低温条件下,六氯铂酸二氢简单溶液中铂薄膜的形成。虽然温度较低,但激光共聚焦显微镜下观察到的铂薄膜并不是由颗粒聚集体组成的,而是由致密层组成的,表面粗糙度小,在生长初期趋于饱和。在一定的平均电流密度下,沉积速率和电流效率明显依赖于温度。基于铂电沉积中两种电化学反应对铂镀层的摩尔质量进行了分析,阐明了铂电沉积具有热活化过程的温度依赖性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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