Development and Analysis of 6500V SiC Power MOSFET

Abstract

We have successfully developed 6500V SiC MOSFET on 6-inch wafer with the on-resistance of 160mΩ and specific on-resistance of 55mΩ.cm2. In this paper, simulation, fabrication and electrical characteristic are reported. At the same time, some body diode characteristics are revealed. Experiments and simulations show that when Vgs=0V the p-well surface doping concentration affects the body diode conduction characteristics. The conduction current mainly flows from the N+ source region to the N-drift region through the channel. The greater the p-well surface doping concentration, the greater the body diode turn-on voltage, and vice versa. When Vgs=-4, the current flows mainly from the P+ base region to the N-drift region and the conduction characteristics of the body diode are mainly affected by the P+ base region.