Optoelectronic Properties of F-co-doped PTO Thin Films Deposited by Spray Pyrolysis

Abstract

F-co-doped Palladiu m Tin Oxide (PTO) thin films were pyrolytically deposited on glass substrate at 450 0 C using an alcoholic precursor solution consisting of Tin (IV) Chloride (SnCl4.5H2O), Palladiu m Ch loride (Pd Cl2) and Ammoniu m Fluoride (NH4F). A resistivity of 0.3-6.9×10 -2 Ωcm was obtained in F-co-doped PTO films prepared with a Pd content of 3.68at% and F content of 0 - 23.96at% under optimized conditions. The optical properties were studied in the UV/ VIS/ NIR region. The optical bandgap of the films laid in the range 3.945 - 4.014 eV. Using dispersion analysis with Drude and Kim terms, optical constants were determined fro m spectro-photometric measurements for films on glass.