Material Removal Rate Prediction using the Classification-Regression Approach

Kart-Leong Lim, R. Dutta
{"title":"Material Removal Rate Prediction using the Classification-Regression Approach","authors":"Kart-Leong Lim, R. Dutta","doi":"10.1109/EPTC50525.2020.9315140","DOIUrl":null,"url":null,"abstract":"Chemical Mechanical Polishing (CMP) is one of the most critical process step in the fabrication of advanced packages, such as Fanout Wafer Level Packaging (FOWLP). CMP process requires tight and dynamic control of process parameters to achieve palnarization, high quality and reliability of organic or in-organic redistribution layer (RDL) surface morphology. Typically, physics based or data driven approaches are implied to predict material removal rate (MRR) and run time control. The former models a closed-form expression between domain knowledge and MRR. Often, the domain knowledge are based on kinetics and contact interaction between the wafer, and the polishing tool. While the latter use time series based training data and machine learning to predict MRR. In this paper, we demonstrate to incorporate wear knowledge as classification and show its effectiveness in predicting MRR. Our experiments shows better overall accuracy being achieved through the proposed classification and regression framework.","PeriodicalId":6790,"journal":{"name":"2020 IEEE 22nd Electronics Packaging Technology Conference (EPTC)","volume":"3385 1","pages":"172-175"},"PeriodicalIF":0.0000,"publicationDate":"2020-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE 22nd Electronics Packaging Technology Conference (EPTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EPTC50525.2020.9315140","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

Chemical Mechanical Polishing (CMP) is one of the most critical process step in the fabrication of advanced packages, such as Fanout Wafer Level Packaging (FOWLP). CMP process requires tight and dynamic control of process parameters to achieve palnarization, high quality and reliability of organic or in-organic redistribution layer (RDL) surface morphology. Typically, physics based or data driven approaches are implied to predict material removal rate (MRR) and run time control. The former models a closed-form expression between domain knowledge and MRR. Often, the domain knowledge are based on kinetics and contact interaction between the wafer, and the polishing tool. While the latter use time series based training data and machine learning to predict MRR. In this paper, we demonstrate to incorporate wear knowledge as classification and show its effectiveness in predicting MRR. Our experiments shows better overall accuracy being achieved through the proposed classification and regression framework.
分类回归方法的材料去除率预测
化学机械抛光(CMP)是制造先进封装(如Fanout晶圆级封装(FOWLP))的最关键工艺步骤之一。CMP工艺要求对工艺参数进行严格的动态控制,以实现有机或非有机再分布层(RDL)表面形貌的palnarization、高质量和可靠性。通常,基于物理或数据驱动的方法隐含预测材料去除率(MRR)和运行时间控制。前者模型是领域知识与MRR之间的封闭表达式。通常,该领域的知识是基于晶圆和抛光工具之间的动力学和接触相互作用。而后者则使用基于时间序列的训练数据和机器学习来预测MRR。在本文中,我们证明了将磨损知识作为分类,并证明了它在预测MRR方面的有效性。我们的实验表明,通过提出的分类和回归框架,可以获得更好的整体精度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信