Variable model levels for power semiconductor devices

Abstract

Model levels for power semiconductor devices are described. The six model levels proposed are universal in nature and can be adopted for categorization of device models in any circuit simulator or finite element (or finite difference) simulator. These levels begin with simple behavioral models, then move to physics-based models of various complexity. This work concentrates on the development and discussion of the model Levels-1, -2, and -3. As an example, the case of Integrated Gate-Commutated Thyristors (IGCT) is discussed in detail, and simulation and experimental results are provided and compared.