Online monitoring of NBTI and HCD in beta-multiplier circuits

Theodor Hillebrand, Maike Taddiken, Konstantin Tscherkaschin, S. Paul, D. Peters-Drolshagen
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引用次数: 5

Abstract

Scaled down analog integrated circuits are prone to degradation. This necessitates an online degradation monitoring and sophisticated analysis of degradation for this circuitry. Voltage reference sources such as beta-multiplier are commonly used circuits to set the operating points for downstream circuitry. Thus, the degradation of these sources are crucial for the overall degradation. In this paper the simulation results of the degradation analysis of a beta-multiplier circuit including the startup circuit, implemented in a 65nm CMOS technology, considering the temperature, are shown. A new approach for online degradation monitoring is introduced, utilizing startup circuit components to ensure minimal area and power overhead.
倍增器电路中NBTI和HCD的在线监测
按比例缩小的模拟集成电路容易退化。这就需要对该电路进行在线退化监测和复杂的退化分析。参考电压源如倍增器通常用于设置下游电路的工作点。因此,这些源的退化对整体退化至关重要。本文给出了在考虑温度的情况下,采用65nm CMOS技术实现的包括启动电路在内的β乘法器电路的退化分析仿真结果。介绍了一种利用启动电路元件保证最小面积和功耗的在线劣化监测新方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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