Economic viability of a solar-grade silicon manufacturing process based upon plasma-arc refining

W. Imler, R. Haun, Robin A. Lampson, M. Charles, Paul G. Meese, Samo Semenic
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Abstract

The first polysilicon ingot manufactured using the plasma-arc process was fabricated into simple photovoltaic devices with 16% efficiency. A larger 250-mm ID reaction vessel was installed in the plasma-arc system, and initial process optimization experiments have resulted in an additional 1.79X reduction in the B-reduction half-life. Conversion of SG-Si production capacity from the Siemens process to plasma-arc processing would result in substantial capital and energy savings, completely eliminate the use of toxic Cl compounds and substantially reduce both solid and liquid waste produced. The fully-loaded production cost of SG-Si manufactured using this process is estimated at $11-13/kg.
基于等离子弧精炼的太阳能级硅制造工艺的经济可行性
使用等离子弧工艺制造的第一个多晶硅锭被制成效率为16%的简单光伏器件。等离子弧系统中安装了一个更大的250毫米内径反应容器,最初的工艺优化实验结果表明,b -还原半衰期又减少了1.79倍。将西门子的SG-Si生产能力转换为等离子弧处理将节省大量资金和能源,完全消除有毒Cl化合物的使用,并大大减少固体和液体废物的产生。使用该工艺生产的SG-Si的满载生产成本估计为每公斤11-13美元。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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