Impact of Nanosecond Laser Anneal on PVD Ru Films

D. Sil, Y. Sulehria, O. Gluschenkov, T. Nogami, R. Cornell, A. Simon, J. Li, J. Demarest, B. Haran, C. Lavoie, J. Jordan-Sweet, V. Stanic, J. Liu, K. Huet, F. Mazzamuto
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引用次数: 3

Abstract

A novel nanosecond (ns) laser anneal (multiple laser shots at sub-melting low laser energy) was employed to reduce the blanket sheet resistance of Ru thin films deposited by physical vapor deposition (PVD). The laser anneal was conducted after PVD Ru deposition and then followed up with a standard 400°C anneal in a forming gas environment. Blanket sheet R decreased by 30% for the laser + furnace annealed Ru films, whereas the drop for just 400°C furnace annealed Ru films was only 18%. Multiple laser exposures at an optimized laser fluence was identified as a key factor in enabling this benefit at BEOL compatible thermal budget suitable for scaled-down Ru interconnects.
纳秒激光退火对PVD Ru薄膜的影响
采用一种新型的纳秒激光退火(亚熔化低激光能量的多次激光照射)方法来降低物理气相沉积(PVD)法制备的Ru薄膜的毯层电阻。在PVD Ru沉积后进行激光退火,然后在成形气体环境中进行标准400°C退火。激光+炉内退火Ru膜的毯层R降低了30%,而仅400°C炉内退火Ru膜的毯层R仅下降了18%。在优化的激光通量下,多次激光照射被认为是实现BEOL兼容热预算的关键因素,适合按比例缩小的Ru互连。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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