Half-threshold bias Ioff reduction down to nA range of thermally and electrically stable high-performance integrated OTS selector, obtained by Se enrichment and N-doping of thin GeSe layers
N. S. Avasarala, G. Donadio, T. Witters, K. Opsomer, B. Govoreanu, A. Fantini, S. Clima, H. Oh, S. Kundu, W. Devulder, M. H. van der Veen, J. van Houdt, M. Heyns, L. Goux, G. Kar
{"title":"Half-threshold bias Ioff reduction down to nA range of thermally and electrically stable high-performance integrated OTS selector, obtained by Se enrichment and N-doping of thin GeSe layers","authors":"N. S. Avasarala, G. Donadio, T. Witters, K. Opsomer, B. Govoreanu, A. Fantini, S. Clima, H. Oh, S. Kundu, W. Devulder, M. H. van der Veen, J. van Houdt, M. Heyns, L. Goux, G. Kar","doi":"10.1109/VLSIT.2018.8510680","DOIUrl":null,"url":null,"abstract":"We report on the reduction of leakage current at half threshold bias (I<inf>off1/2</inf>) down to the 1nA range achieved using Se-enriched or N-doped GeSe. Integrated 50nm OTS devices demonstrated excellent thermal stability up to 600°C, as well as electrical stability (V<inf>th</inf>, I<inf>off1/2</inf>) when operated at a high on current density of 23MA/cm<sup>2</sup> for 10<sup>8</sup> cycles.","PeriodicalId":6561,"journal":{"name":"2018 IEEE Symposium on VLSI Technology","volume":"6 1","pages":"209-210"},"PeriodicalIF":0.0000,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"19","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2018.8510680","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 19
Abstract
We report on the reduction of leakage current at half threshold bias (Ioff1/2) down to the 1nA range achieved using Se-enriched or N-doped GeSe. Integrated 50nm OTS devices demonstrated excellent thermal stability up to 600°C, as well as electrical stability (Vth, Ioff1/2) when operated at a high on current density of 23MA/cm2 for 108 cycles.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
