{"title":"蒙脱土-钌(II)螯合物杂化膜修饰电极对单磷酸鸟苷的光电催化氧化行为","authors":"常雪琴, 王舜, 林大杰, 周环, 关卫鹏, 黄少铭","doi":"10.1360/ZB2008-38-10-907","DOIUrl":null,"url":null,"abstract":"研究了利用LB膜技术制备的蒙脱土-钌(Ⅱ)螯合物杂化膜(Clay-Ru)修饰电极对单磷酸鸟苷的光电催化氧化行为. 实验结果表明:(1)蒙脱土-钌(II)螯合物的纳米单层杂化膜的平均厚度约为(3.4 ± 0.5) nm; (2)紧密排列于ITO电极表面的非电活性蒙脱土的加入降低了电极的电化学活性, 但有效提高了电极的稳定性; (3)具有供电子能力的单磷酸鸟苷(GMP)的加入, 能大大提高ITO/Ru和ITO/Clay-Ru修饰电极的电子传递效率; (4)纳米单层蒙脱土-钌(II)螯合物杂化膜修饰电极的电子传递直接通过蒙脱土纳米单层进行.","PeriodicalId":49128,"journal":{"name":"Science in China. Series B, Chemistry","volume":"32 1","pages":"907-913"},"PeriodicalIF":0.0000,"publicationDate":"2008-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Science in China. Series B, Chemistry","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1360/ZB2008-38-10-907","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
蒙脱土-钌(II)螯合物杂化膜修饰电极对单磷酸鸟苷的光电催化氧化行为
研究了利用LB膜技术制备的蒙脱土-钌(Ⅱ)螯合物杂化膜(Clay-Ru)修饰电极对单磷酸鸟苷的光电催化氧化行为. 实验结果表明:(1)蒙脱土-钌(II)螯合物的纳米单层杂化膜的平均厚度约为(3.4 ± 0.5) nm; (2)紧密排列于ITO电极表面的非电活性蒙脱土的加入降低了电极的电化学活性, 但有效提高了电极的稳定性; (3)具有供电子能力的单磷酸鸟苷(GMP)的加入, 能大大提高ITO/Ru和ITO/Clay-Ru修饰电极的电子传递效率; (4)纳米单层蒙脱土-钌(II)螯合物杂化膜修饰电极的电子传递直接通过蒙脱土纳米单层进行.
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