Interconnections of Low-Temperature Solder and Metallizations

Yi-Wun Wang, C. Kao
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Abstract

The development of solder is from Pb-bearing to Pb-free solder because of toxin. Nowadays, Sn-based solder is usually chosen as the prime materials in electronic packaging. However, the melting point of Sn-based solder is higher than Pb-bearing solder about 40 °C. High process temperature causes the side effects on devices such as warpage, crack and damage. Requiring the melting point of solder is below 200 °C to overcome thermal budget. In is a good candidate to replace Sn owing to its good mechanical properties. Recently, a Cu/In structure is developed for 3D integration applications. Nevertheless, fewer researches investigate low temperature reaction between Cu and In. Previous literature of Cu-In interfacial reactions focused on thick In layer and high temperature reactions. Studying thin In layer and low temperature reactions are important for 3D IC integration. Microstructure evolution of Cu-In compounds at low-temperature are regarded as useful database for interfacial reaction. This study not only concentrates on Cu/In reaction but also discusses deeply the reaction between Cu, In and Ni. Electroplating In layer on Cu metallization and subsequently electroplating Ni on In. The electroplating procedure is one of the major challenges because of the rapid diffusion of Cu and In. Microstructure observation are from 100 °C to 140 °C. The samples were mounted in epoxy resin and ground with SiC paper and Al2O3 powders. The reaction zone was observed using an optical microscope and a scanning electron microscope (SEM). The compositions of Cu-In and Ni-In compounds were determined using an electron microprobe (FE-EPMA). The main results were as follows: (1) (Cu,Ni)In2 formation after electroplating, (2) (Cu,Ni)In2 is stable at 100 °C, (3) (Cu,Ni)11In9 is dominant phase at 140 °C, (4) Microvoids within (Cu,Ni)11In9 and (Ni,Cu)3In7 formation at 140 °C. The result provides detailed Cu-In and Ni-In compounds development and key findings related to the reliability of In-based solder. This study presents the growth of intermetallic compounds in Cu/In/Ni scheme resulting from aging at 100 °C and 140 °C.
低温焊料和金属化的互连
由于毒素的存在,焊料由含铅焊料发展到无铅焊料。目前,锡基焊料通常被选为电子封装的主要材料。然而,锡基焊料的熔点比含铅焊料高约40℃。工艺温度过高会对器件产生翘曲、开裂和损坏等副作用。要求焊料的熔点低于200°C以克服热预算。In具有良好的力学性能,是代替Sn的理想材料。最近,一种Cu/In结构被开发用于三维集成应用。然而,对Cu和In的低温反应研究较少。以往关于Cu-In界面反应的文献主要集中在厚In层和高温反应上。研究超薄In层和低温反应对三维集成电路具有重要意义。Cu-In化合物在低温下的微观结构演变被认为是界面反应的有用数据库。本研究不仅集中于Cu/In反应,还对Cu、In和Ni之间的反应进行了深入的探讨。在铜金属化上电镀In层,再在In上电镀Ni。由于铜和铟的快速扩散,电镀过程是主要的挑战之一。显微组织观察温度范围为100℃~ 140℃。样品被包裹在环氧树脂中,用SiC纸和Al2O3粉末研磨。用光学显微镜和扫描电镜观察了反应区。用电子探针(FE-EPMA)测定了Cu-In和Ni-In化合物的组成。主要结果如下:(1)电镀后形成(Cu,Ni)In2, (2) (Cu,Ni)In2在100℃时稳定,(3)(Cu,Ni)11In9在140℃时为优势相,(4)(Cu,Ni)11In9和(Ni,Cu)3In7在140℃时形成微孔。该结果提供了详细的Cu-In和Ni-In化合物的发展以及与in基焊料可靠性相关的关键发现。本文研究了Cu/ in /Ni体系中金属间化合物在100℃和140℃时效下的生长。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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