The effect of cooling from surface of power Si MOSFET on hot spot temperature

R. Kibushi, T. Hatakeyama, S. Nakagawa, M. Ishizuka
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引用次数: 8

Abstract

This paper describes the effect of cooling from a surface of power Si MOSFET on hot spot temperature. In traditional thermal design of electronics, the temperature distribution of chips is assumed to be uniform for simplicity of thermal design. However, in recent years, thermal problems of electronics are more serious, because electronics have been downsizing. Therefore, we should consider the temperature distribution of the chips. In a chip, semiconductor devices are mounted, and the generation of hot spots in semiconductor devices is widely known. Therefore, the chip has non-uniform temperature distribution. However, the detail of thermal properties of power Si MOSFET, which is one type of transistor, is not clear. Power Si MOSFET has large thermal problems, because high voltage is applied to power Si MOSFET. Therefore, we should obtain thermal properties of power Si MOSFET. Thus, the objective of this study is investigation of thermal properties of power Si MOSFET for high reliability of electronics. In this paper, as a fundamental study, we investigate the effect of cooling from the surfaces of power Si MOSFET on hot spot temperature using electro-thermal analysis. As a result, it was investigated that the effect of cooling from the top surface of the device on hot spot temperature is small.
功率硅MOSFET表面冷却对热点温度的影响
本文讨论了功率硅MOSFET表面冷却对热点温度的影响。在传统的电子产品热设计中,为了简化热设计,通常假定芯片的温度分布是均匀的。然而,近年来,由于电子产品的小型化,电子产品的热问题更加严重。因此,我们应该考虑芯片的温度分布。在芯片中,半导体器件被安装,半导体器件中热点的产生是众所周知的。因此,芯片温度分布不均匀。然而,作为晶体管的一种,功率硅MOSFET的热特性细节尚不清楚。功率硅MOSFET存在较大的热问题,因为在功率硅MOSFET上施加了高电压。因此,我们应该得到功率硅MOSFET的热特性。因此,本研究的目的是研究功率硅MOSFET的热特性,以提高电子器件的可靠性。在本文中,作为一项基础研究,我们使用电热分析方法研究了功率硅MOSFET表面冷却对热点温度的影响。结果表明,器件顶面冷却对热点温度的影响很小。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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