Reliability of Barrierless PVD Mo

2021 IEEE International Interconnect Technology Conference (IITC) Pub Date : 2021-07-06 DOI:10.1109/IITC51362.2021.9537545

D. Tierno, M. Hosseini, M. H. van der Veen, A. Dangol, K. Croes, S. Demuynck, Z. Tokei, E. Litta, N. Horiguchi

引用次数: 3

Abstract

We evaluate the reliability of barrierless Mo metallization on various dielectrics that are used in both BEOL and MOL integration schemes. In particular, we assess the risk of metal drift-induced failure in SiO2, LK3.0, SiCO and Si3N4 films by performing TDDB measurements on MIM planar capacitors. We show that Mo does not drift in SiO2, LK3.0, and SiCO. Despite a thoroughly failure analysis no definitive conclusion could be reached for the Si3N4 films.

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无障碍PVD Mo的可靠性

我们评估了在BEOL和MOL集成方案中使用的各种介电体上无障碍Mo金属化的可靠性。特别地，我们通过对MIM平面电容器进行TDDB测量来评估SiO2、LK3.0、SiCO和Si3N4薄膜中金属漂移诱导失效的风险。结果表明，Mo在SiO2、LK3.0和SiCO中不会漂移。尽管对Si3N4薄膜进行了彻底的失效分析，但没有得出明确的结论。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2021 IEEE International Interconnect Technology Conference (IITC)

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